Comunicazione
InAs nanowire-based field-effect transistors: Temperature dependence of electrical properties and digital applications.
Viscardi L., Faella E., Intonti K., Giubileo F., Demontis V., Prete D., Zannier V., Sorba L., Rossella F., Romano P., Di Bartolomeo A.
We report the fabrication, electrical characterization, and digital applications of back-gated field-effect transistors with a single InAs nanowire as conductive channel at different temperatures. The device shows n-type conduction and high electron mobility. The Arrhenius plot provides the extraction of the Schottky barrier height, whose low value confirms the presence of ohmic contacts between the metal electrodes and the semiconductor nanowire. Three different transport regimes are identified, namely, thermionic emission, tunneling emission, and a crossover regime in which both thermionic and tunneling injections occur. The thermionic mechanism is investigated to extract the subthreshold swing, which becomes lower than 1 V/decade at 200 K, and the density of trap states, which is around $6\times 10^{12}$ cm$^{2}$ eV$^{-1}$. Finally, the examined transistor is used as part of a resistive-load inverter. We evaluate the noise margins for the high and low states. Additionally, we test the inverter at 200 K, showing the quite constant gain at both room and low temperature.