2D p-type black phosphorus for optoelectronic devices.

Few-layered black phosphorus has shown significant potential, due to its ultrathin layered structure, high carrier mobility, mechanical flexibility, and thickness-dependent direct band gap. Herein, we will be presenting the latest results obtained on the fabricated device based on a thin layer BP channel. The fabricated device exhibits unipolar p-type transport with high hole mobility at low Vds. The device shows a linear increase in photocurrent as a function of incident laser power and exposure duration. The results confirm high photoresponsivity from the device under white light illumination. Further, a long photocurrent decay time characteristic confirms the single type of traps dominating the process. Moreover, the temperature-dependent transport measurements show that electrical conductance and field-effect mobility decrease with increasing temperature. The transfer curves show an increase in the hysteresis width and thus can be exploited to enable non-volatile memories with a wider programming window at higher temperatures. The obtained results are significant and can be of interest to the researchers involved in the 2D materials for potential optoelectronic applications.