Comunicazione
Study of photoemission microscopy of single-photon detectors and topological materials.
Azizinia M., Gunnella R., Rezvani S.J.
In the present study, Scanning X-ray Photoelectron Spectromicroscopy (SPEM) has been employed to investigate the chemical and elemental distribution of $Bi_2Se_3$ samples at submicron scale, providing valuable insights into their properties. The aim of this research work is to examine how the quality of the thin films including thickness, composition, and uniformity relates to their growth conditions, and to investigate the role of substrates in physical process. The study presents the results of three deposition sessions conducted at different times on various substrates, namely Pt-patterned Si, Au-patterned Si substrates and borosilicate glass. The stoichiometry of the grown films has been found to be different in the case of growth on different substrates. Further, the effects of defects and impurities present on the $Bi_2Se_3$ thin film has been investigated, being important in order to understand the materials' stability and potential for practical applications. The results show different degrees of oxidation in $Bi_2Se_3$ thin films that could be correlated with the initial conditions of the procedure, regarding temperature and gas flow/vacuum conditions in production process.