Displacement damage effects on a CMOS Single-Photon Avalanche Diode sensor for space application.

Campajola M., Di Capua F., Fiore D.

Comunicazione
VI - Fisica applicata, acceleratori e beni culturali
Aula 29C-2 - Venerdì 21 h 09:00 - 12:00
» Download abstract

The radiation tolerance of SPADs sensors fabricated in 150 nm CMOS process has been investigated, with the aim to enable new spatial applications requiring single-photon detection. Several irradiation campaigns have been performed on SPAD arrays with protons up to 60 MeV at the LNS-INFN laboratories. We characterized the dark-count rate as a function of fluence, and estimate the equivalent space mission dose on several suitable space orbits, in order to provide the limits of operability on such environments. Furthermore, cooling and annealing procedures have been performed aimed to deeply understand the type of radiation induced defects and how to mitigate their effects.

Società Italiana di Fisica - Via Saragozza 12 40123 Bologna P.IVA 00308310374 | credits