Electronic properties of doped graphene probed by ARPES.
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II - Fisica della materia
GSSI Ex ISEF - Aula C - Venerdì 27 h 09:00 - 12:00
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Graphene as a material of choice for applications, requires the tuning of its electronic properties. The electronic band structure and many-body effects of two-dimensional (2D) materials can be fully probed by high-resolution angle-resolved photoemission spectroscopy (ARPES). In this presentation I report on our ARPES studies of graphene, grown on transition metals, doped with different atoms and over a broad doping range. We infer that a metallic, superconducting, topological insulator, or flat-band material regime can be induced, expanding the available functionality of the prototypical 2D material. The ARPES experiments were performed at the BaDElPh beamline of the Elettra synchrotron light laboratory.