Investigating the contact resistances in botom-contact n-type organic transistors: a route towards effective nanoscale devices

Chiarella F., Chianese F., Barra M., Candini A., Affronte M., Cassinese A.

Comunicazione
II - Fisica della materia
GSSI Ex ISEF - Aula C - Venerdì 27 h 09:00 - 12:00
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The contact resistance (RC) phenomenon impacts deeply on the performances of organic field-effect transistors (OFET). So, reducing the channel length towards the sub-micrometer range, the OFET response becomes strongly contact-limited and the MOSFET equations are no longer satisfied. This issue affects the OFET operation in the frequency regime higher than 1 MHz and represents the main bottleneck to further extend their switching speed. We report the results of a wide investigation, carried out by Scanning Kelvin Probe Microscopy, about the RC effects in $n$-type OFET based on evaporated films of PDI8-CN2 and PDIF-CN2 molecules. Bottom-contact devices were here fabricated using both gold and monolayer CVD graphene electrodes.

Società Italiana di Fisica - Via Saragozza 12 40123 Bologna P.IVA 00308310374 | credits