Transport in 2D transition metal dichalcogenide field effect transistors.

Urban F., Giubileo I., Grillo A., Iemmo L., Luongo G., Martucciello N., Passacantando M., Di Bartolomeo A.

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II - Fisica della materia
GSSI Ex ISEF - Aula C - Venerdì 27 h 09:00 - 12:00
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The understanding of transport is an important prerequisite for the exploitation of devices based on 2D materials in technological applications. In this work, we discuss transition metal dichalcogenide (TMD) FETs under different environmental conditions and we demonstrate their dramatic sensitivity to external stimuli. In particular, we show that polar and non-polar molecules, adsorbed on TMD surface, cause an increment of the transfer curve hysteresis, while pressure and temperature can be used to tune the electrical features of the devices.

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