Field emission from nanostructures.

Grillo A., Giubileo F., Urban F., Luongo G., Iemmo L., Passacantando M., Di Bartolomeo A.

Comunicazione
II - Fisica della materia
GSSI Ex ISEF - Aula C - Venerdì 27 h 09:00 - 12:00
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Nanostructured materials have great potential in field emission applications due to their high aspect ratio. We focus on the field emission from gallium-oxide nanopillars and $MoS_2$ nanoflowers. A stable field emission current, with a record density over 100 $A/cm^2$ and a turn on field of 30 V/$\mu$m, is achieved from gallium-oxide. $MoS_2$ nanoflowers are characterized by field enhancement factor up to 880 that allows emission at a turn-on field as small as 12 V/$\mu$m. This work demonstrates that the material properties combined with an appropriate nano-patterning can make $\beta-Ga_{2}O_{3}$ and $MoS_2$ nanoflowers competitive or better than other well-established field emitters.

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