Proton-induced straining of two-dimensional crystals.

Blundo E., Tedeschi D., Felici M., Pettinari G., Yildrim T., Liu B., Lu Y., Polimeni A.

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II - Fisica della materia
GSSI Ex ISEF - Aula C - Venerdì 27 h 09:00 - 12:00
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Semiconducting transition-metal dichalcogenides (TMDs) have been shown to reveal alluring optoelectronic properties when reduced to the single layer. Here we show that proton-irradiation of bulk TMDs leads to the production and accumulation of molecular hydrogen in the first interlayer region. This results in the blistering of one-monolayer thick domes, which stud the crystal surface and locally turn the dark bulk material into an efficient light emitter. These stable and robust nano- and micro-domes host complex strain fields, that cause dramatic changes in the TMD electronic properties, eventually leading to an unprecedented direct-to-indirect bandgap crossover.

Società Italiana di Fisica - Via Saragozza 12 40123 Bologna P.IVA 00308310374 | credits