Random telegraph signal noise in two CMOS SPAD structures.

Fiore D., Campajola M., Di Capua F.

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Despite of well-known advantages, CMOS-based Single-Photon Avalanche Diodes are characterized by a level of noise that can degrade significantly the SPAD performance. Each SPAD responds differently according to geometrical layout and structure type. In this work we compare two structures of Single Photon Avalanche Diodes in 150 nm CMOS technology, characterized by different junction, $P^{+}$/Nwell and Pwell/Niso. We analysed the SPAD behavior of both structures in terms of dark count rate and we investigated the Random Telegraph Signal mechanism after proton irradiation. The comparison highlighted how the structure type influences the noise performance and allowed to identify the low-noise structure.

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