A divalent path to enhance p-type conductivity in a SnO transparent semiconductor

Grauvzinytė M., Tomerini D., Goedecker S., Flores-Livas J.A

II - Fisica della materia
GSSI Ex ISEF - Aula C - Venerdì 27 h 15:30 - 19:00
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The role of the divalent nature of tin is explored in tin monoxide revealing a novel path for enhancing $p$-type conductivity. The consequences of oxygen off-stoichiometry indicate that a defect complex formed by a tin vacancy ($V_{Sn}$) and an impurity interstitial ($D^{i}$) leads to an increased number of free carriers, as well as improved acceptor state stability when compared to the isolated $V_{Sn}$. In this study, we identify several elements that are able to stabilize such a defect complex configuration. The enhanced ionization of the resulting complex arises from the divalent nature of Sn, which allows Sn(II) and Sn(IV) oxidation states to form. Such a novel doping mechanism not only offers a path for creating a high-performance $p$-type transparent SnO, but reveals an as of yet unexplored route to improve conductivity in other compounds formed by multivalent elements, $e.g.$ Sn(II)-based thermoelectrics.

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